Low-temperature Surface Passivation of Moderately Doped Crystalline Silicon by Atomic-layer-deposited Hafnium Oxide Films

被引：35

作者：

Lin, F. ^{[1
]}

Hoex, B. ^{[1
]}

Koh, Y. H. ^{[1
]}

Lin, J. J. ^{[1
]}

Aberle, A. G. ^{[1
]}

机构：

[1] Natl Univ Singapore, Solar Energy Res Inst Singapore, Singapore 117574, Singapore

来源：

INTERNATIONAL CONFERENCE ON MATERIALS FOR ADVANCED TECHNOLOGIES 2011, SYMPOSIUM O | 2012年 / 15卷

关键词：

Hafnium oxide; atomic layer deposition; surface passivation; SI; RECOMBINATION; VAPOR; DIELECTRICS;

D O I：

10.1016/j.egypro.2012.02.010

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

Hafnium oxide (HfO2) films synthesized by thermal atomic layer deposition (ALD) are investigated for low-temperature surface passivation of moderately doped crystalline silicon (c-Si). At intermediate bulk injection levels, effective surface recombination velocities of 55 cm/s and 24 cm/s are achieved on 2.1 Omega cm p-type and 3.3 Omega cm n-type c-Si, respectively, demonstrating a good level of surface passivation. Fourier transform infrared spectroscopy and cross-sectional transmission electron microscopy experiments are conducted to provide insight into the surface passivation mechanism of HfO2 on c-Si. The good passivation quality is shown to be due to both chemical passivation and field-effect passivation. The latter is due to built-in positive charges in the HfO2 film, which is particularly beneficial for the passivation of n-type c-Si. (C) 2011 Published by Elsevier Ltd. Selection and/or peer-review under responsibility of the organizing committee of International Conference on Materials for Advanced Technologies.

引用

页码：84 / 90

页数：7

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