Low-Loss 4-6-GHz Tunable Filter With 3-Bit High-Q Orthogonal Bias RF-MEMS Capacitance Network

被引:51
作者
Park, Sang-June [1 ]
El-Tanani, Mohammed A. [2 ]
Reines, Isak [2 ]
Rebeiz, Gabriel M. [2 ]
机构
[1] Univ Michigan, Dept Elect Engn & Comp Sci, Radiat Lab, Ann Arbor, MI 48109 USA
[2] Univ Calif San Diego, Dept Elect & Comp Engn, La Jolla, CA 92093 USA
关键词
Capacitance network; capacitive loading; coupled open-loop resonators; RF microelectromechanical systems (RF-MEMS); source-load impedance loading; tunable filter;
D O I
10.1109/TMTT.2008.2003521
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper presents a low-loss 4-6-GHz 3-bit tunable filter on a quartz substrate using a high-Q 3-bit orthogonal bias RF microelectromechanical systems capacitance network. Detailed design equations for the capacitively loaded coupled lambda/2 resonators and with capacitive external coupling and source-load impedance loading are discussed. Measurements show an unloaded Q of 85-170, an insertion loss of 1.5-2.8 dB, and a 1-dB bandwidth of 4.35 +/- 0.35% at 4-6 GHz. The measured third-order intermodulation intercept point and 1-dB power compression point at 5.91 GHz are >40 and 27.5 dBm, respectively. The unloaded Q can be improved to 125-210 with the use of a thicker bottom electrode. To our knowledge, this is the highest Q tunable planar filter to date at this frequency range.
引用
收藏
页码:2348 / 2355
页数:8
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