Porous Silicon Based Violet-UV Detector

A new method of fabricating porous silicon detecting (Violet-UV) spectral regions is presented. This method uses a stencil mask contained matrix of round holes, typically 0.5 mm in diameter. SEM, and PL have been used to characterize the morphological and optical properties of the porous silicon (Psi). SEM shows uniformed circular pores with 85% porosity. The studies of the porous structure and optical properties showed that the band gap is about 3.6396 eV at 340.7 nm). Silver (Ag) fingers contact was deposited on the PSi to form MSM (full name) photo- detector. The detector shows in both wavelengths (400 nm, 365 nm) with repetitive shots have very high stability and reliability and the rise time is about 0.5 sec for a 3 volts reverse bias for UV light (365 nm) illumination and 10.41 sec for Violet light (400 nm).