Investigations on high temperature polyimide potentialities for silicon carbide power device passivation

The operation of silicon carbide (SiC) power devices under severe conditions requires the development of thermally, electrically and chemically stable package. Passivation layer provides electrical insulation and environmental protection for the SiC die. As higher junction temperature and higher electric field can be reached within SiC component, consideration must be given to the thermal stability of the dielectric properties of the material in the die Surrounding. Due to their supposed high operating temperature and dielectric strength, spin coated polyimide materials appear as a possible candidate for such passivation and insulation purposes. In this paper, we study the potentialities of a high temperature polyimide from HD Microsystems, for SiC power device passivation, at temperature lip to 300 degrees C. (c) 2005 Elsevier B.V. All rights reserved.