Demonstration of single crystal GaAs layers on CTE-matched substrates by the Smart Cut™ technology

被引：1

作者：

Jouanneau, T. ^{[1
]}

Bogumilowicz, Y. ^{[1
]}

Gergaud, P. ^{[1
]}

Delaye, V. ^{[1
]}

Barnes, J-P. ^{[1
]}

Klinger, V. ^{[2
]}

Dimroth, F. ^{[2
]}

Tauzin, A. ^{[1
]}

Ghyselen, B. ^{[3
]}

Carron, V. ^{[1
]}

机构：

[1] CEA, LETI, MINATEC Campus,17 Rue Martyrs, F-38054 Grenoble 9, France

[2] Fraunhofer Inst Solar Energy Syst, D-79110 Freiburg, Germany

[3] SOITEC SA, F-38190 Bernin, France

来源：

GRAPHENE, GE/III-V, NANOWIRES, AND EMERGING MATERIALS FOR POST-CMOS APPLICATIONS 4 | 2012年 / 45卷 / 04期

关键词：

IMPLANTATION; SI;

D O I：

10.1149/1.3700466

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Templates made of a thin single crystal GaAs layer on CTE-matched substrate (sapphire) have been realized using the Smart Cut (TM) technology. These templates can withstand high processing temperatures thanks to the CTE matching between the GaAs thin film and its support, and therefore can be used for many applications since they require no specific restriction concerning thermal treatments. The GaAs templates have been compared to conventional bulk GaAs substrates. TEM images and XRD spectra show similar crystalline quality. AFM measurements show a similar surface microroughness. Photoluminescence of a AlGaAs double heterostructure grown by MOCVD on the GaAs template shows the same intensity as a reference structure on bulk GaAs. Therefore, the GaAs templates can replace GaAs bulk substrates in various domains such as photonics devices (solar cell, laser) or high frequency electronics.

引用

页码：159 / 167

页数：9

共 10 条

[1] Smart-Cut® process using metallic bonding:: Application to transfer of Si, GaAs, InP thin films [J].

Aspar, B ;

Jalaguier, E ;

Mas, A ;

Locatelli, C ;

Rayssac, O ;

Moriceau, H ;

Pocas, S ;

Papon, AM ;

Michaud, JF ;

Bruel, M .

ELECTRONICS LETTERS, 1999, 35 (12) :1024-1025

[2]

Brozel MR., 1996, Properties of gallium arsenide, V3rd ed

[3] III-V multijunction solar cells for concentrating photovoltaics [J].

Cotal, Hector ;

Fetzer, Chris ;

Boisvert, Joseph ;

Kinsey, Geoffrey ;

King, Richard ;

Hebert, Peter ;

Yoon, Hojun ;

Karam, Nasser .

ENERGY & ENVIRONMENTAL SCIENCE, 2009, 2 (02) :174-192

[4]

Dobrovinskaya ER, 2009, MICRO- OPTO-ELECTRON, P1, DOI 10.1007/978-0-387-85695-7_1

[5]

Grimvall G, 1999, THERMOPHYSICAL PROPE, V13

[6]

Hull R., 1999, PROPERTIES CRYSTALLI

[7] Transfer of 3 in GaAs film on silicon substrate by proton implantation process [J].

Jalaguier, E ;

Aspar, B ;

Pocas, S ;

Michaud, JF ;

Zussy, M ;

Papon, AM ;

Bruel, M .

ELECTRONICS LETTERS, 1998, 34 (04) :408-409

[8] GaAs on Si heterostructures obtained by He and/or H implantation and direct wafer bonding [J].

Radu, I ;

Szafraniak, I ;

Scholz, R ;

Alexe, M ;

Gösele, U .

JOURNAL OF APPLIED PHYSICS, 2003, 94 (12) :7820-7825

[9]

Schone J., 2007, 2006 4 IEEE WCPEC, P776

[10] Metamorphic HEMT MMICs and Modules Operating Between 300 and 500 GHz [J].

Tessmann, Axel ;

Leuther, Arnulf ;

Hurm, Volker ;

Kallfass, Ingmar ;

Massler, Hermann ;

Kuri, Michael ;

Riessle, Markus ;

Zink, Martin ;

Loesch, Rainer ;

Seelmann-Eggebert, Matthias ;

Schlechtweg, Michael ;

Ambacher, Oliver .

IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2011, 46 (10) :2193-2202

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