State-of-the-Art THz Integrated Circuits in InP HBT Technologies

被引：0
|
作者：
Kang, Sungbin [1 ]
Kim, Dongwoo [1 ]
Urteaga, Miguel [2 ]
Seo, Munkyo [1 ]
机构：
[1] Sungkyunkwan Univ, Coll Informat & Comm Engn, Suwon, South Korea
[2] Teledyne Sci Co, Thousand Oaks, CA 91360 USA
来源：
2017 IEEE INTERNATIONAL SYMPOSIUM ON RADIO-FREQUENCY INTEGRATION TECHNOLOGY (RFIT) | 2017年
关键词：
terahertz; terahertz integrated circuits; InP HBT;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper, state-of-the-art terahertz (THz) integrated circuits in InP HBT technologies operating in the 500-600 GHz band are reviewed: the highest-frequency fundamental transistor oscillator, THz power amplifier in HBT with the highest saturated output power, the highest-frequency dynamic frequency divider, and the highest-frequency transmit/receive front-end integrated circuits, to the best of authors' knowledge.
引用
收藏
页码：25 / 27
页数：3
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