Reliability of IGBT in a STATCOM for Harmonic Compensation and Power Factor Correction

被引：0

作者：

Reddy, Lakshmi Gopi ^{[1
]}

Tolbert, Leon M. ^{[1
]}

Ozpineci, Burak ^{[2
]}

Xu, Yan ^{[2
]}

Rizy, D. Tom ^{[2
]}

机构：

[1] Univ Tennessee, Dept Elect Engn & Comp Sci, Knoxville, TN 37996 USA

[2] Oak Ridge Natl Lab, Oak Ridge, TN USA

来源：

2012 TWENTY-SEVENTH ANNUAL IEEE APPLIED POWER ELECTRONICS CONFERENCE AND EXPOSITION (APEC) | 2012年

关键词：

DEVICES;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

With smart grid integration, there is a need to characterize reliability of a power system by including reliability of power semiconductors in grid related applications. In this paper, the reliability of IGBTs in a STATCOM application is presented for two different applications, power factor correction and harmonic elimination. The STATCOM model is developed in EMTP, and analytical equations for average conduction losses in an IGBT and a diode are derived and compared with experimental data. A commonly used reliability model is used to predict reliability of IGBT.

引用

页码：783 / 788

页数：6

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