The impacts of surface conditions on the vapor-liquid-solid growth of germanium nanowires on Si (100) substrate

被引:35
作者
Li, C. B. [1 ,4 ]
Usami, K. [1 ,4 ]
Muraki, T. [1 ]
Mizuta, H. [2 ,3 ,4 ]
Odal, S. [4 ]
机构
[1] Tokyo Inst Technol, Quantum Nanoelect Res Ctr, Tokyo 1528552, Japan
[2] Univ Southampton, Sch Elect & Comp Sci, Southampton SO17 1BJ, Hants, England
[3] Tokyo Inst Technol, Dept Phys Elect, Tokyo 1528552, Japan
[4] SORST JST, Tokyo, Japan
基金
日本科学技术振兴机构; 日本学术振兴会;
关键词
D O I
10.1063/1.2968201
中图分类号
O59 [应用物理学];
学科分类号
摘要
The impacts of surface conditions on the growth of Ge nanowires on a Si (100) substrate are discussed in detail. On SiO2-terminated Si substrates, high-density Ge nanowires can be easily grown. However, on H-terminated Si substrates, growing Ge nanowires is more complex. The silicon migration and the formation of a native SiO2 overlayer on a catalyst surface retard the growth of Ge nanowires. After removing this overlayer in the HF solution, high-density and well-ordered Ge nanowires are grown. Ge nanowires cross vertically and form two sets of parallel nanowires. It is found that nanowires grew along < 110 > directions. (C) 2008 American Institute of Physics.
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页数:3
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