Atomic transport at liquid metal Al2O3 interfaces

被引:0
作者
Saiz, E [1 ]
Cannon, RM [1 ]
Tomsia, AP [1 ]
机构
[1] Lawrence Berkeley Lab, Div Mat Sci, Berkeley, CA 94720 USA
来源
DIFFUSIONS IN MATERIALS: DIMAT2000, PTS 1 & 2 | 2001年 / 194-1卷
关键词
ceramic-metal interfaces; diffusion process; grain boundary grooves; transport mechanism; wetting;
D O I
10.4028/www.scientific.net/DDF.194-199.1297
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
In this work, atomic force microscopy (AFM) has been used to identify the controlling transport mechanisms at metal/oxide interfaces and measure the corresponding diffusivities. Interfacial transport rates in our experiments are two to four orders of magnitude faster than any previously reported rates for the oxide surface. The interfacial diffusivities and the degree of interfacial anisotropy depend on the oxygen activity of the system. Atomic transport at metal/oxide interfaces plays a defining role in many technological processes, and these experiments provide fundamental data for the formulation of the atomic theory needed to explain many of the observed phenomena.
引用
收藏
页码:1297 / 1306
页数:10
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