Influence of structural nonuniformity and nonradiative processes on the luminescence efficiency of InGaAsN quantum wells

被引：23

作者：

Geelhaar, L ^{[1
]}

Galluppi, M

Jaschke, G

Averbeck, R

Riechert, H

Remmele, T

Albrecht, M

Dworzak, M

Hildebrant, R

Hoffmann, A

机构：

[1] Infoneon Technol, Corp Res, D-81730 Munich, Germany

[2] Inst Kristallzuchtung, D-12489 Berlin, Germany

[3] Berlin Univ Technol, Inst Solid State Phys, D-10623 Berlin, Germany

来源：

APPLIED PHYSICS LETTERS | 2006年 / 88卷 / 01期

关键词：

D O I：

10.1063/1.2159566

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We compare the luminescence efficiency (i.e., room-temperature photoluminescence intensity), fluctuations in composition and thickness, degree of localization, and luminescence decay times of In0.37Ga0.63As0.983N0.017 quantum wells grown by molecular-beam epitaxy at different temperatures and annealed under a comprehensive variety of conditions. Luminescence efficiency is not directly coupled to structural nonuniformity or localization, and even three-dimensional growth is not detrimental by itself. In contrast, there is always a correlation between luminescence efficiency and nonradiative decay time. Therefore, the luminescence efficiency of InGaAsN quantum wells depends almost exclusively on the density of nonradiative recombination centers, while the influence of structural nonuniformity is negligible. (c) 2006 American Institute of Physics.

引用

页数：3

共 21 条

[1] Faceting transition in epitaxial growth of dilute GaNAs films on GaAs [J].