Depth profiling of nitrogen within 15N-incorporated nano-crystalline diamond thin films

被引：2

作者：

Garratt, E. ^{[1
]}

AlFaify, S. ^{[1
,2
]}

Cassidy, D. P. ^{[3
]}

Dissanayake, A. ^{[1
]}

Mancini, D. C. ^{[4
]}

Ghantasala, M. K. ^{[5
]}

Kayani, A. ^{[1
]}

机构：

[1] Western Michigan Univ, Dept Phys, Kalamazoo, MI 49008 USA

[2] King Khalid Univ, Fac Sci, Dept Phys, Abha, Saudi Arabia

[3] Western Michigan Univ, Mallinson Inst Sci Educ, Kalamazoo, MI 49008 USA

[4] Argonne Natl Lab, Argonne, IL 60439 USA

[5] Western Michigan Univ, Dept Mech & Aerosp Engn, Kalamazoo, MI 49008 USA

来源：

APPLIED PHYSICS LETTERS | 2013年 / 103卷 / 13期

基金：

美国国家科学基金会;

关键词：

NANOCRYSTALLINE DIAMOND; ELECTRONIC-STRUCTURE; RAMAN-SPECTRA; ULTRANANOCRYSTALLINE; NUCLEATION; SPECTROSCOPY; GROWTH;

D O I：

10.1063/1.4822266

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Nano-Crystalline Diamond (NCD) thin films are a topic of recent interest due to their excellent mechanical and electrical properties. The inclusion of nitrogen is a specific interest as its presence within NCD modifies its conductive properties. The methodology adopted for the characterization of nitrogen incorporated NCD films grown on a chromium underlayer determined a correlation between the chromium and nitrogen concentrations as well as a variation in the concentration profile of elements. Additionally, the concentration of nitrogen was found to be more than three times greater for these films versus those grown on a silicon substrate. (C) 2013 AIP Publishing LLC.

引用

页数：5

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