Numerical study of Cu(In,Ga)Se2 solar cell performance toward 23% conversion efficiency

被引：57

作者：

Hirai, Yoshiaki ^{[1
]}

Kurokawa, Yasuyoshi ^{[1
]}

Yamada, Akira ^{[1
,2
]}

机构：

[1] Tokyo Inst Technol, Dept Phys Elect, Meguro Ku, Tokyo 1528552, Japan

[2] Tokyo Inst Technol, Photovolta Res Ctr PVREC, Meguro Ku, Tokyo 1528552, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2014年 / 53卷 / 01期

关键词：

THIN-FILMS; SIMULATION;

D O I：

10.7567/JJAP.53.012301

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The effects of conduction band grading in a CO(In,Ga)Se-2 (CIGS) thin film with an average bandgap of 1.4 eV on solar cell performance were investigated by changing the minimum bandgap (E-gmin,) and its position, employing the software wxAMPS. The calculation was carried out, taking CdS/CIGS heterointerface recombination into account, by incorporating a thin defective layer into the interface. For CIGS with a flat conduction band profile, i.e., without conduction band grading, the effects of the valence band offset (Delta E-V) between a CdS layer and a CIGS layer with bandgaps from 1.05 to 1.6 eV were investigated. It was found that efficiency was increased by up to 3% by changing the conduction band profile from flat to double-graded, with a deep notch located in the vicinity of the CdS/CIGS interface. On the other hand, efficiency was increased by over 6% and reached 22% by increasing Delta E-V up to 0.3 eV in the case of CIGS with a bandgap of 1.35 eV. Finally, an efficiency of 23.4% was achieved by combining a single-graded conduction band profile with a Delta E-V of 0.3 eV. This result shows that a single-graded conduction band profile is required for high-efficiency wide-bandgap CIGS solar cells if the recombination at the CdS/CIGS heterointerface can be suppressed. (C) 2014 The Japan Society of Applied Physics

引用

页数：6

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