Properties of Al2O3-films deposited on silicon by atomic layer epitaxy

被引：42

作者：

Ericsson, P

Bengtsson, S

Skarp, J

机构：

[1] Dept. of Solid State Electronics, Chalmers University of Technology

[2] Microchemistry Ltd., Box 45

来源：

MICROELECTRONIC ENGINEERING | 1997年 / 36卷 / 1-4期

关键词：

D O I：

10.1016/S0167-9317(97)00022-1

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Al2O3-films deposited by atomic layer epitaxy onto silicon wafers were investigated structurally and electrically. A post-deposition anneal at 900 degrees C resulted in a decrease in film thickness of about 10% and an increase in the index of refraction of about 3%. The densification did not significantly influence the breakdown fields which were in the range of 7-8 MV/cm, but reduced the leakage currents through the films by several orders of magnitude. Mobile charges and charge trapping were observed using the capacitance-voltage technique. The charging properties improved dramatically after the post-deposition anneal.

引用

页码：91 / 94

页数：4

共 12 条

[1]

ARNOLD E, 1994, INTERNATIONAL ELECTRON DEVICES MEETING 1994 - IEDM TECHNICAL DIGEST, P813, DOI 10.1109/IEDM.1994.383300

[2] Applications of aluminium nitride films deposited by reactive sputtering to silicon-on-insulator materials [J].