Growth regimes in pulsed laser deposition of aluminum oxide films

被引:67
|
作者
Di Fonzo, F. [1 ]
Tonini, D. [1 ]
Bassi, A. Li [1 ]
Casari, C. S. [1 ]
Beghi, M. G. [1 ]
Bottani, C. E. [1 ]
Gastaldi, D. [2 ]
Vena, P. [2 ]
Contro, R. [2 ]
机构
[1] Politecn Milan, Dipartimento Chim Mat & Ingn Chim G Natta, NEMAS Ctr NanoEngineered Mat & Surfaces, I-20133 Milan, Italy
[2] Politecn Milan, Dip Ing Strutturale, I-20133 Milan, Italy
来源
关键词
D O I
10.1007/s00339-008-4720-y
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Alumina is technologically exploited in several forms, ranging from compact hard films as protective coatings to open microstructures of high specific area as supports for catalysts. Currently, various production processes are used to deposit the different forms. PLD has the potential of obtaining not only the different forms, but also a continuous modulation of properties, by tuning of the process parameters. This work investigates the relationship between the process parameters and the resulting film morphology, structure and properties for PLD performed with an alumina target in a background oxygen atmosphere. Three distinct growth regimes are found, leading, respectively, to compact homogeneous films, columnar structures and open microstructures. These structures are quantitatively characterized, and the ranges of the process parameters corresponding to the three regimes are identified. An empirical scaling law is proposed, which can be exploited as a guide for the design of growth processes aimed at obtaining specific film properties.
引用
收藏
页码:765 / 769
页数:5
相关论文
共 50 条
  • [31] Growth of nanoporous high-entropy oxide thin films by pulsed laser deposition
    Huiming Guo
    Xin Wang
    Alexander D. Dupuy
    Julie M. Schoenung
    William J. Bowman
    Journal of Materials Research, 2022, 37 : 124 - 135
  • [32] Growth of antiperovskite oxide Ca3SnO films by pulsed laser deposition
    Minohara, Makoto
    Yukawa, Ryu
    Kitamura, Miho
    Kumai, Reiji
    Murakami, Youichi
    Kumigashira, Hiroshi
    JOURNAL OF CRYSTAL GROWTH, 2018, 500 : 33 - 37
  • [33] On the epitaxial growth of PZT films by pulsed laser deposition
    Hamedi, LH
    Guilloux-Viry, M
    Perrin, A
    Cherkani, MH
    ANNALES DE CHIMIE-SCIENCE DES MATERIAUX, 1998, 23 (1-2): : 377 - 380
  • [34] Growth of ZnTe films by pulsed laser deposition technique
    Ghosh, B.
    Ghosh, D.
    Hussain, S.
    Bhar, R.
    Pal, A. K.
    JOURNAL OF ALLOYS AND COMPOUNDS, 2012, 541 : 104 - 110
  • [35] Growth of superconducting tantalum films by pulsed laser deposition
    Scherschel, M., 1600, Publ by Elsevier Science Publishers B.V., Amsterdam, Netherlands (194-96):
  • [36] Growth of epitaxial GaN films by pulsed laser deposition
    Vispute, RD
    Talyansky, V
    Sharma, RP
    Choopun, S
    Downes, M
    Venkatesan, T
    Jones, KA
    Iliadis, AA
    Khan, MA
    Yang, JW
    APPLIED PHYSICS LETTERS, 1997, 71 (01) : 102 - 104
  • [37] A study of aluminum nitride growth by reactive pulsed laser deposition
    Basillais, A
    Dutouquet, C
    Vivien, C
    Mathias, J
    Boulmer-Leborgne, C
    Perrière, J
    ALT'99 INTERNATIONAL CONFERENCE ON ADVANCED LASER TECHNOLOGIES, 2000, 4070 : 270 - 274
  • [38] Effects of aluminum doping and substrate temperature on zinc oxide thin films grown by pulsed laser deposition
    Md Alauddin
    Jae Kyu Song
    Seung Min Park
    Applied Physics A, 2010, 101 : 707 - 711
  • [39] Effects of aluminum doping and substrate temperature on zinc oxide thin films grown by pulsed laser deposition
    Alauddin, Md
    Song, Jae Kyu
    Park, Seung Min
    APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2010, 101 (04): : 707 - 711
  • [40] Titanium oxide thin films produced by pulsed laser deposition
    Sima, C.
    Grigoriu, C.
    Viespe, C.
    Pasuk, I.
    Matei, E.
    JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, 2009, 11 (06): : 826 - 830