Planar Photonic Crystal Vertical-Cavity Surface-Emitting Lasers

被引:10
作者
Tan, Meng Peun [1 ]
Kasten, Ansas M. [1 ]
Sulkin, Joshua D. [1 ]
Choquette, Kent D. [1 ]
机构
[1] Univ Illinois, Dept Elect & Comp Engn, Urbana, IL 61801 USA
基金
美国国家科学基金会;
关键词
Index guiding; photonic crystal; single transverse mode; vertical-cavity surface-emitting lasers (VCSELs); TRANSVERSE-MODE CHARACTERISTICS; SINGLE-MODE; THRESHOLD VOLTAGE; HIGH-POWER; PERFORMANCE; OPERATION;
D O I
10.1109/JSTQE.2013.2241398
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Planar index-guided proton-implanted photonic crystal vertical-cavity surface-emitting lasers are fabricated and characterized. Index guiding from the photonic crystal improves the performance of the lasers by creating a stable light output versus current response, reducing the threshold current, and enhancing the differential quantum efficiency. Examination of the etch depth dependence of laser efficiency reveals various mechanisms that affect the laser performance and modal properties such as optical loss, Joule heating, and spectral gain-resonance alignment. Photonic crystal designs can be chosen which result in lasing operation only in the fundamental transverse mode from threshold to maximum power, even for the condition of blue-shifted gain spectrum relative to the cavity resonance. Suitable photonic crystal designs are shown to be manufacturable due to the planar device topology, the use of optical lithography in all processing steps, and compatibility with virtually any vertical-cavity surface-emitting laser epitaxial designs.
引用
收藏
页数:7
相关论文
共 37 条
[1]   Transverse mode control by etch-depth tuning in 1120-nm GaInAs/GaAs photonic crystal [J].
Baek, JH ;
Song, DS ;
Hwang, IK ;
Lee, KH ;
Lee, YH ;
Ju, YG ;
Kondo, T ;
Miyamoto, T ;
Koyama, F .
OPTICS EXPRESS, 2004, 12 (05) :859-867
[2]   TRANSVERSE-MODE CHARACTERISTICS OF VERTICAL CAVITY SURFACE-EMITTING LASERS [J].
CHANGHASNAIN, CJ ;
ORENSTEIN, M ;
VONLEHMEN, A ;
FLOREZ, LT ;
HARBISON, JP ;
STOFFEL, NG .
APPLIED PHYSICS LETTERS, 1990, 57 (03) :218-220
[3]  
Choquette K.D., 1999, VERTICAL CAVITY SURF, P193
[4]   GAAS VERTICAL-CAVITY SURFACE EMITTING LASERS FABRICATED BY REACTIVE ION ETCHING [J].
CHOQUETTE, KD ;
HASNAIN, G ;
WANG, YH ;
WYNN, JD ;
FREUND, RS ;
CHO, AY ;
LEIBENGUTH, RE .
IEEE PHOTONICS TECHNOLOGY LETTERS, 1991, 3 (10) :859-862
[5]   LOW-THRESHOLD VOLTAGE VERTICAL-CAVITY LASERS FABRICATED BY SELECTIVE OXIDATION [J].
CHOQUETTE, KD ;
SCHNEIDER, RP ;
LEAR, KL ;
GEIB, KM .
ELECTRONICS LETTERS, 1994, 30 (24) :2043-2044
[6]   Single transverse mode selectively oxidized vertical cavity lasers [J].
Choquette, KD ;
Geib, KM ;
Briggs, RD ;
Allerman, AA ;
Hindi, JJ .
VERTICAL-CAVITY SURFACE-EMITTING LASERS IV, 2000, 3946 :230-233
[7]   CAVITY CHARACTERISTICS OF SELECTIVELY OXIDIZED VERTICAL-CAVITY LASERS [J].
CHOQUETTE, KD ;
LEAR, KL ;
SCHNEIDER, RP ;
GEIB, KM .
APPLIED PHYSICS LETTERS, 1995, 66 (25) :3413-3415
[8]   Scaling vertical-cavity surface-emitting laser reliability for petascale systems [J].
Cunningham, John E. ;
McElfresh, David K. ;
Lopez, Leon D. ;
Vacar, Dan ;
Krishnamoorthy, Ashok V. .
APPLIED OPTICS, 2006, 45 (25) :6342-6348
[9]   Single fundamental mode photonic crystal vertical cavity laser with improved output power [J].
Danner, AL ;
Kim, TS ;
Choquette, KD .
ELECTRONICS LETTERS, 2005, 41 (06) :325-326
[10]   Mode control in vertical-cavity surface-emitting lasers by post-processing using focused ion-beam etching [J].
Dowd, P ;
Raddatz, L ;
Sumaila, Y ;
Asghari, M ;
White, IH ;
Heard, PJ ;
Allen, GC ;
Schneider, RP ;
Tan, MRT ;
Wang, SY .
IEEE PHOTONICS TECHNOLOGY LETTERS, 1997, 9 (09) :1193-1195