High In Composition InGaN for InN Quantum Dot Intermediate Band Solar Cells

被引：4

作者：

Gomez, Victor J. ^{[1
]}

Soto Rodriguez, Paul E. D. ^{[1
]}

Kumar, Praveen ^{[1
]}

Calleja, Enrique ^{[1
]}

Noetzel, Richard ^{[1
]}

机构：

[1] Univ Politecn Madrid, ETSI Telecomunicac, ISOM Inst Syst Based Optoelect & Microtechnol, E-28040 Madrid, Spain

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2013年 / 52卷 / 08期

关键词：

PHASE-SEPARATION; EFFICIENCY; BLUE;

D O I：

10.7567/JJAP.52.08JH09

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report a detailed study of the growth of InGaN by plasma assisted molecular beam epitaxy. The In composition is around 55% providing the optimum bandgap in the near-infrared spectral region of the matrix material of quantum dot (QD) intermediate band solar cells. The layer thickness is 80nm for sufficient absorption. Optimum growth conditions are identified at elevated N flux and reduced growth temperature for minimized phase separation and smooth surface morphology. On these optimized InGaN layers, InN QDs are grown exhibiting small size and high density. Optical emission is observed from both the InGaN layer and InN QDs. (C) 2013 The Japan Society of Applied Physics

引用

页数：4

共 27 条

[1] InGaN Solar Cells: Present State of the Art and Important Challenges [J].

Bhuiyan, Ashraful Ghani ;

Sugita, Kenichi ;

Hashimoto, Akihiro ;

Yamamoto, Akio .

IEEE JOURNAL OF PHOTOVOLTAICS, 2012, 2 (03) :276-293

[2] Present status of intermediate band solar cell research [J].

Cuadra, L ;

Martí, A ;

Luque, A .

THIN SOLID FILMS, 2004, 451 :593-599

[3] Influence of the overlap between the absorption coefficients on the efficiency of the intermediate band solar cell [J].

Cuadra, L ;

Martí, A ;

Luque, A .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2004, 51 (06) :1002-1007

[4] Theoretical study on InxGa1-xN/GaN quantum dots solar cell [J].

Deng, Qingwen ;

Wang, Xiaoliang ;

Yang, Cuibai ;

Xiao, Hongling ;

Wang, Cuimei ;

Yin, Haibo ;

Hou, Qifeng ;

Li, Jinmin ;

Wang, Zhanguo ;

Hou, Xun .

PHYSICA B-CONDENSED MATTER, 2011, 406 (01) :73-76

[5] InGaN quantum dot growth in the limits of Stranski-Krastanov and spinodal decomposition [J].

Figge, Stephan ;

Tessarek, Christian ;

Aschenbrenner, Timo ;

Hommel, Detlef .

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2011, 248 (08) :1765-1776

[6] A comprehensive diagram to grow (0001)InGaN alloys by molecular beam epitaxy [J].

Gacevic, Z. ;

Gomez, V. J. ;

Garcia Lepetit, N. ;

Soto Rodriguez, P. E. D. ;

Bengoechea, A. ;

Fernandez-Garrido, S. ;

Noetzel, R. ;

Calleja, E. .

JOURNAL OF CRYSTAL GROWTH, 2013, 364 :123-127

[7] InAlN/GaN Bragg reflectors grown by plasma-assisted molecular beam epitaxy [J].

Gacevic, Z. ;

Fernandez-Garrido, S. ;

Hosseini, D. ;

Estrade, S. ;

Peiro, F. ;

Calleja, E. .

JOURNAL OF APPLIED PHYSICS, 2010, 108 (11)

[8] A growth diagram for plasma-assisted molecular beam epitaxy of In-face InN [J].

Gallinat, C. S. ;

Koblmueller, G. ;

Brown, J. S. ;

Speck, J. S. .

JOURNAL OF APPLIED PHYSICS, 2007, 102 (06)

[9] Multiple band and impurity photovoltaic solar cells: General theory and comparison to tandem cells [J].

Green, MA .

PROGRESS IN PHOTOVOLTAICS, 2001, 9 (02) :137-144

[10] Control of GaN surface morphologies using plasma-assisted molecular beam epitaxy [J].

Heying, B ;

Averbeck, R ;

Chen, LF ;

Haus, E ;

Riechert, H ;

Speck, JS .

JOURNAL OF APPLIED PHYSICS, 2000, 88 (04) :1855-1860

← 1 2 3 →