Electromigration in integrated circuit conductors

被引：133

作者：

Lloyd, JR ^{[1
]}

机构：

[1] Lloyd Technol Associates, Stow, MA 01775 USA

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 1999年 / 32卷 / 17期

关键词：

D O I：

10.1088/0022-3727/32/17/201

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The important integrated circuit failure mechanism of electromigration is reviewed. The basic physics of failure is introduced and the concepts of electromigration and thermally induced stresses are discussed. A concept of thermodynamics in a conducting material and the response to non-direct current will be presented.

引用

页码：R109 / R118

页数：10

共 69 条

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