Electromigration in integrated circuit conductors

被引：135
作者：
Lloyd, JR [1 ]
机构：
[1] Lloyd Technol Associates, Stow, MA 01775 USA
来源：
JOURNAL OF PHYSICS D-APPLIED PHYSICS | 1999年 / 32卷 / 17期
关键词：
D O I：
10.1088/0022-3727/32/17/201
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The important integrated circuit failure mechanism of electromigration is reviewed. The basic physics of failure is introduced and the concepts of electromigration and thermally induced stresses are discussed. A concept of thermodynamics in a conducting material and the response to non-direct current will be presented.
引用
收藏
页码：R109 / R118
页数：10
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