Deep Levels Characterization in GaN HEMTs-Part II: Experimental and Numerical Evaluation of Self-Heating Effects on the Extraction of Traps Activation Energy

被引：50
作者：
Chini, Alessandro [1 ,2 ]
Soci, Fabio [1 ,2 ]
Meneghini, Matteo [2 ,3 ]
Meneghesso, Gaudenzio [2 ,3 ]
Zanoni, Enrico [2 ,3 ]
机构：
[1] Univ Modena & Reggio Emilia, Dept Engn Enzo Ferrari, I-41125 Modena, Italy
[2] Univ Bologna, IUNET, I-40126 Bologna, Italy
[3] Univ Padua, Dept Informat Engn, I-35131 Padua, Italy
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 2013年 / 60卷 / 10期
关键词：
Charge carrier processes; gallium nitride; MODFETs; power semiconductor devices; reliability; ALGAN/GAN HEMTS;
D O I：
10.1109/TED.2013.2278290
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper, the effects of device self-heating on the extraction of traps activation energy are investigated through experimental measurements and numerical simulations. Neglecting the device temperature increase during the experimental measurements can lead to an underestimation of traps activation energies as well as nonoverlapping Arrhenius plots. It will be shown that said artifacts can be removed once device thermal resistance is known and used to correct the temperatures data points at which trap time constants are extracted. The correctness of the proposed method is also supported through numerical simulations carried out both by neglecting and considering thermal effects during the drain current transient measurements. Finally, the experimental results obtained are also suggesting a novel method for the extraction of device thermal resistance, which yielded comparable results with respect to those obtained with other experimental techniques.
引用
收藏
页码：3176 / 3182
页数：7
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