Impact of AlGaN on luminescence capability of rare-earth ions in AlGaN

被引：48

作者：

Wakahara, A ^{[1
]}

机构：

[1] Toyohashi Univ Technol, Dept Elect & Elect Engn, Toyohashi, Aichi 4418580, Japan

[2] Toyohashi Univ Technol, Instelligent Sensing Syst Res Ctr, Toyohashi, Aichi 4418580, Japan

来源：

OPTICAL MATERIALS | 2006年 / 28卷 / 6-7期

关键词：

D O I：

10.1016/j.optmat.2005.09.011

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Effects of AIN molar fraction on the luminescence properties of rare-earth elements (RE) impurities of Eu and Tb in AlxGa1-xN (x = 0-1) have been investigated using cathodoluminescence and time-resolved photoluminescence. Rutherford backscattering and extended X-ray absorption fine-structure analysis reveal that the implanted Eu atom is on the group-III site. PL intensity due to inner-shell transitions of RE increases with AIN molar fraction and tends to saturate for higher fraction of AIN. Thermal quenching of PL intensity became very small with the increase of Al contents. Strong PL was observed even at 400 K in case of Eu-implanted samples with high Al content. The time-resolved PL confirmed that the improvement of PL capability is caused by the increase of energy transfer efficiency/active RE site and the reduction of energy-back-transfer process. (c) 2005 Elsevier B.V. All rights reserved.

引用

页码：731 / 737

页数：7

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