Transmission electron microscopy study of defect reduction in two-step lateral epitaxial overgrown nonplanar GaN substrate templates

被引:9
作者
Zhou, W [1 ]
Ren, DW
Dapkus, PD
机构
[1] Univ So Calif, Dept Mat Sci, Los Angeles, CA 90089 USA
[2] Univ So Calif, Dept Phys, Los Angeles, CA 90089 USA
[3] Univ So Calif, Dept Elect Engn Electrophys, Los Angeles, CA 90089 USA
关键词
dislocation reduction; threading dislocation; transmission electron microscopy; TEM; lateral epitaxial overgrowth; LEO; metalorganic chemical vapor deposition; MOCVD; III-V semiconductors; GaN; nitrides; lasers;
D O I
10.1016/j.jcrysgro.2005.12.108
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
Transmission electron microscopy (TEM) is carried out to characterize the extended defect reduction in low-defect nonplanar GaN substrate templates grown by lateral epitaxial overgrowth (LEO). The LEO nonplanar GaN substrate template has a trapezoidal cross section with smooth (0 0 0 1) and {1 1 2 2} facets. We demonstrate here the dislocation distribution and behavior in both ordinary LEO and two-step LEO. Penetration of threading dislocations (TDs) beyond mask windows is observed in ordinary LEO Substrates. In two-step LEO substrates, which utilize the tendency for TDs to bend 90 at certain plane interfaces, only a type dislocations with Burgers vector b = (3)/(1) < 1 1 2 0 > are generated in the upper part above the TD bending zone between two mask windows with a density of similar to 8 x 10(7)cm(-2), and there are almost no dislocations in the LEO wing region. This approach provides a promising path to produce low-defect GaN substrate templates for high-performance buried heterostructure lasers. (c) 2006 Elsevier B.V. All rights reserved.
引用
收藏
页码:11 / 17
页数:7
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