Emulating the paired-pulse facilitation of a biological synapse with a NiOx-based memristor

被引：156

作者：

Hu, S. G. ^{[1
]}

Liu, Y. ^{[1
]}

Chen, T. P. ^{[2
]}

Liu, Z. ^{[3
]}

Yu, Q. ^{[1
]}

Deng, L. J. ^{[1
]}

Yin, Y. ^{[4
]}

Hosaka, Sumio ^{[4
]}

机构：

[1] Univ Elect Sci & Technol China, State Key Lab Elect Thin Films & Integrated Devic, Chengdu 610054, Peoples R China

[2] Nanyang Technol Univ, Sch Elect & Elect Engn, Singapore 639798, Singapore

[3] Guangdong Univ Technol, Sch Mat & Energy, Guangzhou 510006, Guangdong, Peoples R China

[4] Gunma Univ, Grad Sch Engn, Kiryu, Gunma 3768515, Japan

来源：

APPLIED PHYSICS LETTERS | 2013年 / 102卷 / 18期

关键词：

RESISTIVE SWITCHING MEMORY; ATOMIC SWITCH; PLASTICITY; DEVICE; FILM;

D O I：

10.1063/1.4804374

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We study the paired-pulse-induced response of a NiOx-based memristor. The behavior of the memristor is surprisingly similar to the paired-pulse facilitation of a biological synapse. When the memristor is stimulated with a pair of electrical pulses, the current of the memristor induced by the second pulse is larger than that by the first pulse. In addition, the magnitude of the facilitation decreases with the pulse interval, while it increases with the pulse magnitude or pulse width. (C) 2013 AIP Publishing LLC.

引用

页数：4

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