Crystalline Properties and Strain Relaxation Mechanism of CVD Grown GeSn

被引：119

作者：

Gencarelli, F. ^{[1
,2
]}

Vincent, B. ^{[1
]}

Demeulemeester, J. ^{[3
]}

Vantomme, A. ^{[3
]}

Moussa, A. ^{[1
]}

Franquet, A. ^{[1
]}

Kumar, A. ^{[1
,3
]}

Bender, H. ^{[1
]}

Meersschaut, J. ^{[1
]}

Vandervorst, W. ^{[1
,3
]}

Loo, R. ^{[1
]}

Caymax, M. ^{[1
]}

Temst, K. ^{[3
]}

Heyns, M. ^{[1
,2
]}

机构：

[1] IMEC, B-3001 Louvain, Belgium

[2] Katholieke Univ Leuven, MTM Dept, B-3001 Louvain, Belgium

[3] Katholieke Univ Leuven, IKS, B-3001 Louvain, Belgium

来源：

ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY | 2013年 / 2卷 / 04期

基金：

日本学术振兴会;

关键词：

CHEMICAL-VAPOR-DEPOSITION; EPITAXIAL-GROWTH; VEGARDS LAW; INXGA1-XAS; THICKNESS; ISLANDS; LAYER;

D O I：

10.1149/2.011304jss

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In this contribution, we discuss the crystalline properties of strained and strain-relaxed CVD-grown GeSn layers with Sn content in the range 6.4-12.6 at.%. A positive deviation from Vegard's law was observed and a new experimental bowing parameter was extracted for GeSn: b(GeSn) = 0.041 angstrom (in excellent agreement with recent theoretical predictions). The GeSn critical thickness for strain relaxation as a function of Sn concentration was determined, resulting in significantly higher values than those predicted by equilibrium models. A composition-dependent strain relaxation mechanism was also found, with the formation of an increasing density of GeSn pyramidal islands in addition to misfit dislocations at lower Sn concentration. (C) 2013 The Electrochemical Society. All rights reserved.

引用

页码：P134 / P137

页数：4

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