A Review of the Pinned Photodiode for CCD and CMOS Image Sensors

被引：336
作者：
Fossum, Eric R. [1 ]
Hondongwa, Donald B. [1 ]
机构：
[1] Thayer Sch Engn Dartmouth, 14 Engn Dr, Hanover, NH 03755 USA
来源：
IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY | 2014年 / 2卷 / 03期
关键词：
Charge-coupled device (CCD); CMOS active pixel image sensor (CIS); photodetector; pinned photodiode (PPD); pixel; CHARGE-TRANSFER; PIXEL; OPTIMIZATION; DEGRADATION; TECHNOLOGY; OPERATION; CAPACITY; NOISE;
D O I：
10.1109/JEDS.2014.2306412
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The pinned photodiode is the primary photodetector structure used in most CCD and CMOS image sensors. This paper reviews the development, physics, and technology of the pinned photodiode.
引用
收藏
页码：33 / 43
页数：11
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