The impact of channel engineering on the performance and reliability of LDMOS transistors

被引：10

作者：

Mohapatra, NR ^{[1
]}

Ehwald, KE ^{[1
]}

Barth, R ^{[1
]}

Rücker, H ^{[1
]}

Bolze, D ^{[1
]}

Schley, P ^{[1
]}

Schmidt, D ^{[1
]}

Wulf, HE ^{[1
]}

机构：

[1] IHP, D-15236 Frankfurt, Germany

来源：

PROCEEDINGS OF ESSDERC 2005: 35TH EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE | 2005年

关键词：

D O I：

10.1109/ESSDER.2005.1546689

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, we study the performance and reliability of LDMOS (Laterally Diffused MOS) transistors, developed in a 0.25 mu m SiGe:C BiCMOS technology, for two different channel doping schemes a) Uniform and b) Single-sided Halo (SH). We show that SH LDMOS transistors are more reliable and offer better DC and high frequency performance. We also demonstrate BVDS*F-T values up to 630GHzV with SH LDMOS transistors.

引用

页码：481 / 484

页数：4

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