Temperature-dependent photoluminescence emission and Raman scattering from Mo1-xWxS2 monolayers

被引：28
作者：
Chen, Yanfeng [1 ]
Wen, Wen [1 ,2 ]
Zhu, Yiming [1 ]
Mao, Nannan [1 ,3 ]
Feng, Qingliang [1 ]
Zhang, Mei [1 ,2 ]
Hsu, Hung-Pin [4 ]
Zhang, Jin [3 ]
Huang, Ying-Sheng [5 ]
Xie, Liming [1 ,2 ]
机构：
[1] Natl Ctr Nanosci & Technol, CAS Ctr Excellence Nanosci, CAS Key Lab Standardizat & Measurement Nanotechno, Beijing 100190, Peoples R China
[2] Univ Chinese Acad Sci, Beijing 100049, Peoples R China
[3] Peking Univ, Coll Chem & Mol Engn, Ctr Nanochem, Beijing 100871, Peoples R China
[4] Ming Chi Univ Technol, Dept Elect Engn, Taipei 106, Taiwan
[5] Natl Taiwan Univ Sci & Technol, Dept Elect Engn, Taipei 106, Taiwan
来源：
NANOTECHNOLOGY | 2016年 / 27卷 / 44期
基金：
中国国家自然科学基金; 中国博士后科学基金;
关键词：
transition metal dichalcogenide; 2D material; alloy; Raman spectroscopy; photoluminescence; temperature dependence; TRANSITION-METAL DICHALCOGENIDES; BAND-GAP; MOS2; GRAPHENE; ALLOYS; GROWTH; SEMICONDUCTORS; NANORIBBONS; TRANSISTORS; MULTILAYER;
D O I：
10.1088/0957-4484/27/44/445705
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
2D transition metal dichalcogenide (TMD) alloys with tunable band gaps have recently gained wide interest due to their potential applications in future nanoelectronics and optoelectronics. Here, we report the temperature-dependent photoluminescence (PL) and Raman spectra of Mo1-xWxS2 monolayers with W composition x = 0, 0.29, 0.53, 0.66 and 1 in the temperature range 93-493 K. We observed a linear temperature dependence of PL emission energy and Raman frequency. The PL intensity is enhanced at high temperature (>393 K). The temperature coefficients are negative for both PL and Raman bands, which may result from anharmonicity, thermal expansion and composition disorder.
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页数：6
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