Fabrication of bipolar junction transistor on (001)-oriented diamond by utilizing phosphorus-doped n-type diamond base

被引：40

作者：

Kato, Hiromitsu ^{[1
,2
]}

Makino, Toshiharu ^{[1
,2
]}

Ogura, Masahiko ^{[1
,2
]}

Takeuchi, Daisuke ^{[1
,2
]}

Yamasaki, Satoshi ^{[1
,2
,3
]}

机构：

[1] Natl Inst Adv Ind Sci & Technol, Energy Technol Res Inst, Tsukuba, Ibaraki 3058568, Japan

[2] Japan Sci & Technol Corp JST, CREST, Chiyoda Ku, Tokyo 1020081, Japan

[3] Univ Tsukuba, Grad Sch Pure & Appl Sci, Tsukuba, Ibaraki 3058577, Japan

来源：

关键词：

Bipolar junction transistor; Diffusion length; Phosphorus doping; n-Type conductivity; Chemical vapor deposition; Heavily phosphorus doped diamond; PLASMA;

D O I：

10.1016/j.diamond.2013.02.004

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Bipolar junction transistors (BJTs) with vertical p-n-p structure were fabricated on (001)-oriented diamond by utilizing phosphorus-doped diamond for the base n-type layer, and the electrical properties were examined, including the diffusion length of injected holes. The basic transistor action with stable current response from 100 nA to 50 mu A was clearly observed at room temperature in both common-base and common-emitter configurations. Heavily phosphorus-doped diamond was introduced by the selective doping method under the base electrodes in order to reduce the series resistance, which is essential for realizing BJTs on (001). (C) 2013 Elsevier B.V. All rights reserved.

引用

页码：41 / 44

页数：4

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