Precipitation induced by diffusivity anisotropy in Sn grains under electron current stressing

被引:18
作者
Huang, T. C. [1 ]
Yang, T. L. [1 ]
Ke, J. H. [1 ]
Li, C. C. [1 ]
Kao, C. R. [1 ]
机构
[1] Natl Taiwan Univ, Dept Mat Sci & Engn, Taipei 10764, Taiwan
关键词
Electromigration; Precipitation; Crystallography orientation; Intermetallic compound; CHIP SOLDER JOINTS; FAILURE MECHANISMS; ELECTROMIGRATION; ORIENTATION;
D O I
10.1016/j.jallcom.2012.12.060
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Nickel diffuses five orders of magnitude faster along the c-axis of white Sn than along the a-axis. Experimental evidence is presented to show that, when Ni atoms diffuse from a Sn grain with its c-axis aligned with the Ni flux direction, across the grain boundary, and then into a neighboring Sn grain with its a-axis aligned with the Ni flux direction, Ni3Sn4 will preferentially precipitates at the Sn grain boundary. This is a direct proof that precipitation can be caused by the diffusivity anisotropy of a diffusion medium. (C) 2012 Elsevier B.V. All rights reserved.
引用
收藏
页码:237 / 240
页数:4
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