Pt-doped Ni-silicide films formed by pulsed-laser annealing: Microstructural evolution and thermally robust Ni1-xPtxSi2 formation

被引：9

作者：

Kim, Jinbum ^{[1
,2
]}

Shin, Ilgyou ^{[1
]}

Park, Taejin ^{[1
,2
]}

Kim, Jinyong ^{[3
]}

Choi, Seongheum ^{[3
]}

Lee, Sungho ^{[1
]}

Hong, Seongpyo ^{[1
]}

Lee, Hyung-Ik ^{[4
]}

Won, Jung Yeon ^{[4
]}

Kim, Taegon ^{[1
]}

Kim, Yihwan ^{[1
]}

Hwang, Kihyun ^{[1
]}

Lee, Hoo-Jeong ^{[3
]}

Kim, Hyoungsub ^{[3
,5
]}

机构：

[1] Samsung Elect, Semicond R&D Ctr, Hwaseong 18488, South Korea

[2] Sungkyunkwan Univ, Dept Semicond & Display Engn, Suwon 16419, South Korea

[3] Sungkyunkwan Univ, Sch Adv Mat Sci & Engn, Suwon 16419, South Korea

[4] Samsung Adv Inst Technol, Analyt Engn Grp, Suwon 16678, South Korea

[5] Sungkyunkwan Univ, SKKU Adv Inst Nanotechnol SAINT, Suwon 16419, South Korea

来源：

JOURNAL OF ALLOYS AND COMPOUNDS | 2019年 / 788卷

基金：

新加坡国家研究基金会;

关键词：

Nickel-silicide; Pulsed laser annealing; Melting; Microstructure; Phase; Composition; THIN-FILMS; SI; IMPROVEMENT; STABILITY; NI2SI;

D O I：

10.1016/j.jallcom.2019.02.307

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Pulsed-laser annealing (PLA) was performed on a preformed Pt-doped Ni-rich silicide film (Ni2Si phase), and its microstructural and phase evolution were studied from submelting to melting condition by varying the laser power density (P). Vertically nonuniform compositional profile with an interfacial intermixing was observed under a solid state reaction regime (P < 400 mJ/cm(2)) due to a limited atomic diffusion. At higher P condition, melting/resolidification occurred with a continuous increase in the Si concentration, and various microstructures of the film evolved with increasing P: amorphous structure and nucleation/growth of NiSi and NiSi2 phases form in that order on the Si interface. Lastly, by applying additional rapid thermal annealing on the polycrystalline mixture of NiSi and NiSi2 phases formed by PLA, a uniform Pt-doped NiSi2 film with strong epitaxial growth tendency on the Si(001) substrate and high thermal stability (up to 900 degrees C) was synthesized. (C) 2019 Elsevier B.V. All rights reserved.

引用

页码：1013 / 1020

页数：8

共 3 条

[1] Formation of (CoxNi1-x)Si2 ternary silicide by thermal annealing of evaporated Co/Ni thin films on Si substrate
Sedrati, Charafeddine
Bouabellou, Abderrahmane
Derafa, Achour
Boudissa, Mokhtar
Benazzouz, Chawki
Hammoudi, Abdelhakim
VACUUM, 2015, 117 : 4 - 7
[2] Transport and structural characterization of epitaxial Nd1+xBa2-xCu3Oy thin films grown on LaAlO3 and Ni metal substrates by pulsed-laser deposition
Cantoni, C
Norton, DP
Christen, DK
Goyal, A
Kroeger, DM
Verebelyi, DT
Paranthaman, M
PHYSICA C, 1999, 324 (3-4): : 177 - 186
[3] Growth and Electrical Properties of 25%Bi(Ni1/2Ti1/2)O3-75%PbTiO3 Thin Films on Pt/TiO2/SiO2/Si Substrates Using Pulsed Laser Deposition Method
Wu, Guangheng
Zhou, Hong
Qin, Ni
Bao, Dinghua
JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 2011, 94 (06) : 1675 - 1678

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