Circuits to Measure the Delay Variability of MOSFETs

被引：0

作者：

Balakrishnan, Karthik ^{[1
]}

Jenkins, Keith ^{[1
]}

机构：

[1] IBM Corp, Thomas J Watson Res Ctr, Yorktown Hts, NY 10598 USA

来源：

2014 IEEE INTERNATIONAL CONFERENCE ON MICROELECTRONIC TEST STRUCTURES (ICMTS) | 2014年

关键词：

D O I：

暂无

中图分类号：

TP301 [理论、方法];

学科分类号：

081202 ;

摘要：

Two test circuits have been implemented and measured in order to characterize delay variability in individual MOSFETs. Measurement results show that both circuits have high sensitivities to gate resistance, which differentiate them from other circuits which characterize variations in traditional DC parameters such as threshold voltage and channel length.

引用

页码：127 / 131

页数：5

共 4 条

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