Transverse mode characteristics of vertical-cavity surface-emitting lasers buried in amorphous GaAs antiguide layer

被引：18
作者：
Yoo, BS
Chu, HY
Park, HH
Lee, HG
Lee, JJ
机构：
[1] Electronics and Telecom. Res. Inst., Taejon
[2] Seoul National University, Seoul
[3] Research Department, Electronics and Telecom. Res. Inst., Taejon
[4] Stanford University, Stanford, CA
[5] Dong Kuk University, Seoul
[6] Compound Semiconductor Department, Electronics and Telecom. Res. Inst., Taejon
[7] Kongju National Teacher's College, Chungnam
[8] Massachusetts Inst. of Technology, Cambridge, MA
来源：
IEEE JOURNAL OF QUANTUM ELECTRONICS | 1997年 / 33卷 / 10期
关键词：
amorphous semiconductor materials; finite difference methods; laser modes; semiconductor lasers; surface-emitting lasers;
D O I：
10.1109/3.631285
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We report the transverse mode characteristics of InGaAs-GaAs vertical-cavity surface-emitting lasers (VCSEL's) buried in a low-temperature-deposited amorphous GaAs (a-GaAs) layer. The maximum current maintaining a stable fundamental transverse mode is increased by the antiguide effect of the a-GaAs clad with a high refractive index, For 10- and 15-mu m-diameter devices, we attain a stable single-mode emission over a wide range of current, The antiguide effects and transverse mode profiles in vertical cavity lasers buried in the high refractive index clad are calculated using a two-dimensional beam propagation method.
引用
收藏
页码：1794 / 1800
页数：7
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