Random spin-orbit coupling and spin relaxation in symmetric quantum wells

被引：89

作者：

Sherman, EY ^{[1
]}

机构：

[1] Karl Franzens Univ Graz, Inst Theoret Phys, A-8010 Graz, Austria

来源：

APPLIED PHYSICS LETTERS | 2003年 / 82卷 / 02期

关键词：

D O I：

10.1063/1.1533839

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The effective "spin-orbit" field acting upon spins of carriers in two-dimensional electronic structures (the Rashba field) arises due to the spatial asymmetry of the system. It will be shown in this letter that even in quantum wells with perfectly symmetric environment, a random Rashba field arises due to fluctuations of concentration of dopant ions. The magnitude of the field, its correlation function, and electron spin relaxation rate in this field are presented. (C) 2003 American Institute of Physics.

引用

页码：209 / 211

页数：3

共 26 条

[1] Coupled quantum dots as quantum gates [J].

Burkard, G ;

Loss, D ;

DiVincenzo, DP .

PHYSICAL REVIEW B, 1999, 59 (03) :2070-2078

[2]

BYCHKOV YA, 1984, JETP LETT, V39, P79

[3]

CHAIKIN PM, 1997, PRINCIPLES CONDENSED, P699

[4] ELECTRONIC ANALOG OF THE ELECTROOPTIC MODULATOR [J].

DATTA, S ;

DAS, B .

APPLIED PHYSICS LETTERS, 1990, 56 (07) :665-667

[5]

Dyakonov M. I., 1972, SOV PHYS-SOLID STATE, V13, P3023

[6]

DYAKONOV MI, 1986, SOV PHYS SEMICOND+, V20, P110

[7]

Efros A. L., 1989, ELECT PROPERTIES DOP

[8]

ELLIOT RJ, 1964, PHYS REV, V96, P266

[9] Spin relaxation of conduction electrons [J].

Fabian, J ;

Das Sarma, S .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1999, 17 (04) :1708-1715

[10] Removal of spin degeneracy in p-SiGe quantum wells demonstrated by spin photocurrents -: art. no. 075328 [J].

Ganichev, SD ;

Rössler, U ;

Prettl, W ;

Ivchenko, EL ;

Bel'kov, VV ;

Neumann, R ;

Brunner, K ;

Abstreiter, G .

PHYSICAL REVIEW B, 2002, 66 (07) :753281-753287

← 1 2 3 →