Design of a Pre-distortion Power Amplifier for Ku-Band/5G applications

被引：0

作者：

Lin, Chung-Ching ^{[1
]}

Alzahmi, Ahmed ^{[1
]}

Mirzaie, Nahid ^{[1
]}

Byun, Gyung-Su ^{[2
]}

机构：

[1] Southern Methodist Univ, Dept Elect Engn, Dallas, TX 75205 USA

[2] Inha Univ, Dept Informat & Commun, Incheon, South Korea

来源：

2018 IEEE INTERNATIONAL CONFERENCE ON ELECTRO/INFORMATION TECHNOLOGY (EIT) | 2018年

基金：

美国国家科学基金会;

关键词：

power amplifier; millimeter wave; CMOS; 5G communication; ku band; pre-distortion technique; Darlington pair;

D O I：

暂无

中图分类号：

TP39 [计算机的应用];

学科分类号：

081203 ; 0835 ;

摘要：

A 15 GHz power amplifier design for 5G applications is presented in this paper. The proposed power amplifier consists in a three-stage architecture. A low complex pre-distortion circuit is designed as the first stage. Since the CMOS process suffers from poor intrinsic gain (gm*ro), especially in the millimeter wave band, the Darlington pair driver stage is exploited to maximize the power gain. A FET-stack structure is used to enable high voltage operation and thus increase the output power. The proposed power amplifier is designed and simulated in a standard 130nm CMOS process. The simulation results show that the proposed power amplifier can attain 1dB compression point (P1dB) of 18.9 dBm with a power added efficiency (PAE) of 26 % under 3.6 V and 1.8 V dual voltage supply.

引用

页码：808 / 811

页数：4

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