Dopant distribution in selectively regrown InP:Fe and InGaP:Fe studied by time-resolved photoluminescence

被引：2

作者：

Gaarder, A ^{[1
]}

Barrios, CA ^{[1
]}

Messmer, ER ^{[1
]}

Lourdudoss, S ^{[1
]}

Marcinkevicius, S ^{[1
]}

机构：

[1] Royal Inst Technol, Dept Phys Opt, S-10044 Stockholm, Sweden

来源：

2000 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS, CONFERENCE PROCEEDINGS | 2000年

关键词：

D O I：

10.1109/ICIPRM.2000.850349

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Time resolved photoluminescence with 1 - 2 mu m spatial resolution has been applied for characterization of iron distribution in semi-insulating InP and InGaP epitaxial layers regrown by hydride vapor phase epitaxy around etched mesas. The mesas for the InP regrowth were etched along [110] and [-110]. For InGaP they contained GaAs/AlGaAs quantum well laser structures. In all cases, the Fe concentration was found to be close to the target values and showed little variation along the regrown layers.

引用

页码：518 / 521

页数：4

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