A memristor crossbar array of titanium oxide for non-volatile memory and neuromorphic applications

被引：48

作者：

Abbas, Haider ^{[1
]}

Abbas, Yawar ^{[1
]}

Truong, Son Ngoc ^{[2
]}

Min, Kyeong-Sik ^{[2
]}

Park, Mi Ra ^{[1
]}

Cho, Jongweon ^{[1
]}

Yoon, Tae-Sik ^{[3
]}

Kang, Chi Jung ^{[1
]}

机构：

[1] Myongji Univ, Dept Phys, Gyeonggi Do 449728, South Korea

[2] Kookmin Univ, Sch Elect Engn, Seoul 136702, South Korea

[3] Myongji Univ, Dept Mat Sci & Engn, Gyeonggi Do 449728, South Korea

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2017年 / 32卷 / 06期

关键词：

memristor; crossbar array; RRAM; neuromorphic pattern recognition; titanium oxide; SYNAPSE;

D O I：

10.1088/1361-6641/aa6a3a

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this work 3 x 3 crossbar arrays of titanium oxide were fabricated and tested for non-volatile memory applications and neuromorphic pattern recognition. The non-volatile memory characteristics of the memristor were examined using retention tests for each memristor. In order to test neuromorphic pattern recognition, the memristor crossbar array was programmed to store '111', '100' and '010' at the first, second and third columns of the array, where '0' and '1' represent the high-resistance state (HRS) and low-resistance state (LRS), respectively. The three similar input patterns of '111', '100' and '010' were applied to the crossbar array, for pattern recognition. Using a twin memristor crossbar array mechanism all three input patterns were recognized.

引用

页数：7

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