1.25 volt, low cost, embedded FLASH memory for low density applications

被引：22
作者：
McPartland, RJ [1 ]
Singh, R [1 ]
机构：
[1] Bell Labs, Lucent Technol, Allentown, PA 18103 USA
来源：
2000 SYMPOSIUM ON VLSI CIRCUITS, DIGEST OF TECHNICAL PAPERS | 2000年
关键词：
D O I：
10.1109/VLSIC.2000.852878
中图分类号：
TP3 [计算技术、计算机技术];
学科分类号：
0812 ;
摘要：
A low cost, embedded flash memory cell, with read control-gate voltage as low as 1.25 volts, has been developed. Single cell testers and 4K-bit arrays have been fabricated and characterized. Fabrication requires only a single masking step (thick gate oxide) above that used in high-performance core CMOS logic technologies. Applications include low-density nonvolatile memory, control of redundancy in SRAM and DRAM memories, ID or security code registers, and other switch functions.
引用
收藏
页码：158 / 161
页数：4
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