InGaAs/AlAsSb/InP quantum cascade lasers operating at wavelengths close to 3 μm

被引：87

作者：

Revin, D. G. ^{[1
]}

Cockburn, J. W.

Steer, M. J.

Airey, R. J.

Hopkinson, M.

Krysa, A. B.

Wilson, L. R.

Menzel, S.

机构：

[1] Univ Sheffield, Dept Phys & Astron, Sheffield S3 7HR, S Yorkshire, England

[2] Univ Sheffield, Dept Elect & Elect Engn, EPSRC Natl Ctr III V Technol, Sheffield S1 3JD, S Yorkshire, England

来源：

APPLIED PHYSICS LETTERS | 2007年 / 90卷 / 02期

关键词：

Current density - Display devices - Laser pulses - Semiconducting indium gallium arsenide - Thermal effects - Threshold voltage;

D O I：

10.1063/1.2431035

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The authors report the realization of short wavelength (3.05 mu m <=lambda <= 3.6 mu m) InP lattice-matched In0.53Ga0.47As/AlAs0.56Sb0.44 quantum cascade lasers (QCLs). The highest-performance device displays pulsed laser action at wavelengths between 3.4 and 3.6 mu m, for temperatures up to 300 K, with a low temperature (80 K) threshold current density of approximately 2.6 kA/cm(2), and a characteristic temperature of T-0 similar to 130 K. The shortest wavelength QCL (lambda approximate to 3.05 mu m) has a higher threshold current density (similar to 12 kA/cm(2) at T=20 K) and operates in pulsed mode at temperatures up to 110 K. (c) 2007 American Institute of Physics.

引用

页数：3

共 8 条

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