A 18 GHz Broadband Stacked FET Power Amplifier Using 130 nm Metamorphic HEMTs

被引：13

作者：

Lee, Choonghee ^{[1
]}

Kim, Youngmin ^{[1
]}

Koh, Yumin ^{[3
]}

Kim, Jihoon ^{[1
]}

Seo, Kwangseok ^{[3
]}

Jeong, Jinho ^{[2
]}

Kwon, Youngwoo ^{[1
]}

机构：

[1] Seoul Natl Univ, Inst New Media & Commun, Sch Elect Engn & Comp Sci, Seoul 151742, South Korea

[2] Kwangwoon Univ, Dept Elect & Commun Engn, Seoul 139701, South Korea

[3] Seoul Natl Univ, Interuniv Semicond Res Ctr, Sch Elect Engn & Comp Sci, Seoul 151742, South Korea

来源：

IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS | 2009年 / 19卷 / 12期

关键词：

Metamorphic high electron mobility transistor (mHEMT); power amplifier (PA); stacked field effect transistor (FET);

D O I：

10.1109/LMWC.2009.2033533

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A broadband power amplifier (PA) with a 3 dB power bandwidth of 72% is presented using metamorphic high electron mobility transistors (mHEMTs). A stacked FET structure, where transistors are series connected to combine voltage swings, is employed to overcome relatively low breakdown voltages of mHEMTs. Series-connected PA's show much higher load impedance compared to the parallel combined transistors, which allows output matching to be realized in the low quality (Q)-factor region, providing the broadband performance. The fabricated PA using quadruple-stacked 130 nm mHEMTs has a gain of 21.2 dB and saturated output power of 26.4 dBm with power added efficiency (PAE) of 33% at the design frequency of 18 GHz. The 3 dB output power bandwidth is from 10 to 23 GHz.

引用

页码：828 / 830

页数：3

共 10 条

[1]

Bessemoulin A, 2007, IEEE COMPOUND SEMICONDUCTOR INTEGRATED CIRCUIT SYMPOSIUM - 2007 IEEE CSIC SYMPOSIUM, TECHNOLOGY DIGEST, P99

[2] The high voltage/high power FET (HiVP1) [J].

Ezzeddine, AK ;

Huang, HC .

2003 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS (RFIC) SYMPOSIUM, DIGEST OF PAPERS, 2003, :215-218

[3] Ultra-broadband GaAsHIFET MMIC PA [J].

Ezzeddine, Amin K. ;

Huang, Ho C. .

2006 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, VOLS 1-5, 2006, :1320-+

[4] A 20 dBm linear RF power amplifier using stacked silicon-on-sapphire MOSFETs [J].

Jeong, Jinho ;

Pornpromlikit, Sataporn ;

Asbeck, Peter M. ;

Kelly, Dylan .

IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, 2006, 16 (12) :684-686

[5]

Lefebvre B, 2007, IEEE MTT-S, P824

[6] Design and analysis of stacked power amplifier in series-input and series-output configuration [J].

Lei, Ming-Fong ;

Tsai, Zuo-Min ;

Lin, Kun-You ;

Wang, Huei .

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2007, 55 (12) :2802-2812

[7] A compact 6.5-W PHEMT MMIC power amplifier for Ku-band applications [J].

Lin, Che-Hung ;

Liu, Hong-Zhi ;

Chu, Chen-Kuo ;

Huang, Hou-Kuei ;

Liu, Chi-Chuan ;

Chang, Ching-Hsueh ;

Wu, Chang-Luen ;

Chang, Chian-Sern ;

Wang, Yeong-Her .

IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, 2007, 17 (02) :154-156

[8]

Peterson K. E., 1989, IEEE 1989 MTT-S International Microwave Symposium Digest (Cat. No.89CH2725-0), P945, DOI 10.1109/MWSYM.1989.38878

[9]

PETERSON KE, 1991, IEEE MTT S INT JUN, V2, P823

[10] A broadband, push-pull power MMIC operating at K/Ka-band frequencies [J].

Schellenberg, JM .

2002 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, VOLS 1-3, 2002, :909-912

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