Phononic crystal;
Band gap;
Viscoelasticity;
Plane wave;
Standard solid model;
COMPOSITES;
D O I:
10.1016/j.commatsci.2009.03.040
中图分类号:
T [工业技术];
学科分类号:
08 ;
摘要:
The band gap of one dimensional (1D) phononic crystal with viscoelastic host material is studied in this paper. The standard solid model is used to simulate the viscoelastic behavior of the host material and the fillers embedded in the host material are still assumed elastic material. The band gap problem in 1D phononic crystal leads to an eigenvalue problem by using the plane wave expansion method and the Bloch-Floquet wave theory in a periodic structure. An iterative algorithm is designed to obtain the band gap structure due to the dependence of elastic constants on frequency for the viscoelastic host material. A numerical example is given for steel/epoxy phononic crystal. The band gap of 1D phononic crystal is evaluated for different viscoelastic constants, namely, relaxation time, initial and final state elastic modulus. It is found that the viscoelastic constants of host material affect not only the location but also the width of band gaps. (C) 2009 Published by Elsevier B.V.
机构:
Hong Kong Univ Sci & Technol, Dept Phys, Kowloon, Hong Kong, Peoples R ChinaHong Kong Univ Sci & Technol, Dept Phys, Kowloon, Hong Kong, Peoples R China
Liu, ZY
Zhang, XX
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机构:
Hong Kong Univ Sci & Technol, Dept Phys, Kowloon, Hong Kong, Peoples R ChinaHong Kong Univ Sci & Technol, Dept Phys, Kowloon, Hong Kong, Peoples R China
Zhang, XX
Mao, YW
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Hong Kong Univ Sci & Technol, Dept Phys, Kowloon, Hong Kong, Peoples R ChinaHong Kong Univ Sci & Technol, Dept Phys, Kowloon, Hong Kong, Peoples R China
Mao, YW
Zhu, YY
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机构:
Hong Kong Univ Sci & Technol, Dept Phys, Kowloon, Hong Kong, Peoples R ChinaHong Kong Univ Sci & Technol, Dept Phys, Kowloon, Hong Kong, Peoples R China
Zhu, YY
Yang, ZY
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Hong Kong Univ Sci & Technol, Dept Phys, Kowloon, Hong Kong, Peoples R ChinaHong Kong Univ Sci & Technol, Dept Phys, Kowloon, Hong Kong, Peoples R China
Yang, ZY
Chan, CT
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机构:
Hong Kong Univ Sci & Technol, Dept Phys, Kowloon, Hong Kong, Peoples R ChinaHong Kong Univ Sci & Technol, Dept Phys, Kowloon, Hong Kong, Peoples R China
Chan, CT
Sheng, P
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机构:
Hong Kong Univ Sci & Technol, Dept Phys, Kowloon, Hong Kong, Peoples R ChinaHong Kong Univ Sci & Technol, Dept Phys, Kowloon, Hong Kong, Peoples R China
机构:
Hong Kong Univ Sci & Technol, Dept Phys, Kowloon, Hong Kong, Peoples R ChinaHong Kong Univ Sci & Technol, Dept Phys, Kowloon, Hong Kong, Peoples R China
Liu, ZY
Zhang, XX
论文数: 0引用数: 0
h-index: 0
机构:
Hong Kong Univ Sci & Technol, Dept Phys, Kowloon, Hong Kong, Peoples R ChinaHong Kong Univ Sci & Technol, Dept Phys, Kowloon, Hong Kong, Peoples R China
Zhang, XX
Mao, YW
论文数: 0引用数: 0
h-index: 0
机构:
Hong Kong Univ Sci & Technol, Dept Phys, Kowloon, Hong Kong, Peoples R ChinaHong Kong Univ Sci & Technol, Dept Phys, Kowloon, Hong Kong, Peoples R China
Mao, YW
Zhu, YY
论文数: 0引用数: 0
h-index: 0
机构:
Hong Kong Univ Sci & Technol, Dept Phys, Kowloon, Hong Kong, Peoples R ChinaHong Kong Univ Sci & Technol, Dept Phys, Kowloon, Hong Kong, Peoples R China
Zhu, YY
Yang, ZY
论文数: 0引用数: 0
h-index: 0
机构:
Hong Kong Univ Sci & Technol, Dept Phys, Kowloon, Hong Kong, Peoples R ChinaHong Kong Univ Sci & Technol, Dept Phys, Kowloon, Hong Kong, Peoples R China
Yang, ZY
Chan, CT
论文数: 0引用数: 0
h-index: 0
机构:
Hong Kong Univ Sci & Technol, Dept Phys, Kowloon, Hong Kong, Peoples R ChinaHong Kong Univ Sci & Technol, Dept Phys, Kowloon, Hong Kong, Peoples R China
Chan, CT
Sheng, P
论文数: 0引用数: 0
h-index: 0
机构:
Hong Kong Univ Sci & Technol, Dept Phys, Kowloon, Hong Kong, Peoples R ChinaHong Kong Univ Sci & Technol, Dept Phys, Kowloon, Hong Kong, Peoples R China