Large-grained polycrystalline silicon on grlass for thin-film solar cells

被引：69
作者：
Gall, S.
Schneider, J.
Klein, J.
Huebener, K.
Muske, M.
Rau, B.
Conrad, E.
Sieber, I.
Petter, K.
Lips, K.
Stöger-Pollach, M.
Schattschneider, P.
Fuhs, W.
机构：
[1] Hahn Meitner Inst Berlin GmbH, D-12489 Berlin, Germany
[2] Vienna Univ Technol, A-1040 Vienna, Austria
来源：
THIN SOLID FILMS | 2006年 / 511卷
关键词：
aluminium; chemical vapor deposition (CVD); crystallization; epitaxy;
D O I：
10.1016/j.tsf.2005.12.067
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We have investigated the formation of large-grained polycrystalline silicon (poly-Si) films on glass for thin-film solar cells using the 'seed layer concept' which is based on the epitaxial thickening of a thin large-grained poly-Si template (seed layer). Due to the glass substrate all process steps are limited to a temperature of about 600 degrees C. The aluminium-induced layer exchange (ALILE) process based on the aluminium-induced crystallisation (AIC) of amorphous Si has been used to prepare p(+)-type seed layers featuring large grains and a high preferential (100) orientation of the surface. The seed layers have been thickened by electron cyclotron resonance chemical vapour deposition (ECRCVD) to form the p-type absorber of the solar cell. First poly-Si thin-film solar cell structures have been prepared by deposition of an n(+)-type a-Si: H emitter. So far an open circuit voltage of 284 mV has been reached without any additional treatments like defect annealing and defect passivation. (c) 2005 Elsevier B.V All rights reserved.
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页码：7 / 14
页数：8
相关论文
共 21 条
[1]   Polycrystalline silicon thin-film solar cells on glass by aluminium-induced crystallisation and subsequent ion-assisted deposition (ALICIA) [J].
Aberle, AG ;
Straub, A ;
Widenborg, PI ;
Sproul, AB ;
Huang, Y ;
Campbell, P .
PROGRESS IN PHOTOVOLTAICS, 2005, 13 (01) :37-47
[2]  
BASORE PA, 2004, P 19 EUR PHOT SOL EN, P455
[3]   Low-temperature Si epitaxy with high deposition rate using ion-assisted deposition [J].
Bergmann, RB ;
Zaczek, C ;
Jansen, N ;
Oelting, S ;
Werner, JH .
APPLIED PHYSICS LETTERS, 1998, 72 (23) :2996-2998
[4]  
Gall S., 2002, P PV EUR, P87
[5]   Polycrystalline Si films formed by Al-induced crystallization (AIC) with and without Al oxides at Al/a-Si interface [J].
Kim, H ;
Kim, D ;
Lee, G ;
Kim, D ;
Lee, SH .
SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2002, 74 (1-4) :323-329
[6]   High-quality polycrystalline silicon thin film prepared by a solid phase crystallization method [J].
Matsuyama, T ;
Terada, N ;
Baba, T ;
Sawada, T ;
Tsuge, S ;
Wakisaka, K ;
Tsuda, S .
JOURNAL OF NON-CRYSTALLINE SOLIDS, 1996, 198 (pt 2) :940-944
[7]   Elucidation of the layer exchange mechanism in the formation of polycrystalline silicon by aluminum-induced crystallization [J].
Nast, O ;
Wenham, SR .
JOURNAL OF APPLIED PHYSICS, 2000, 88 (01) :124-132
[8]   Aluminum-induced crystallization of amorphous silicon on glass substrates above and below the eutectic temperature [J].
Nast, O ;
Puzzer, T ;
Koschier, LM ;
Sproul, AB ;
Wenham, SR .
APPLIED PHYSICS LETTERS, 1998, 73 (22) :3214-3216
[9]   Influence of interface and Al structure on layer exchange during aluminum-induced crystallization of amorphous silicon [J].
Nast, O ;
Hartmann, AJ .
JOURNAL OF APPLIED PHYSICS, 2000, 88 (02) :716-724
[10]   Aluminium-induced crystallisation of silicon on glass for thin-film solar cells [J].
Nast, O ;
Brehme, S ;
Pritchard, S ;
Aberle, AG ;
Wenham, SR .
SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2001, 65 (1-4) :385-392
123