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A new investigation of copper's role in enhancing Al-Cu interconnect electromigration resistance from an atomistic view
被引：66
|作者：
Liu, XY
Liu, CL
Borucki, LJ
机构：
[1] Motorola Inc, Predict Engn Lab, Los Alamos, NM 87545 USA
[2] Motorola Inc, Predict Engn Lab, Mesa, AZ 85202 USA
关键词：
computer simulation;
aluminum alloys;
diffusion;
grain boundaries;
segregation;
D O I：
10.1016/S1359-6454(99)00186-X
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
An explanation of why Cu prolongs the electromigration lifetime of Al-Cu interconnects in comparison to Al is provided based on atomistic calculations. Copper preferentially segregates to the grain-boundary (GB) interstitial sites. The overall GB diffusivity is reduced with Cu segregation at GB sites. Calculation results predict that in Al(Cu) lines, Cu will diffuse first, with Al diffusion essentially suppressed because of a higher diffusion activation energy. The activation energy for Cu incubation diffusion is calculated to be 0.95 eV. The predictions are in excellent agreement with experiments. (C) 1999 Acta Metallurgica Inc. Published by Elsevier, Science Ltd. All rights reserved.
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页码：3227 / 3231
页数：5
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