Properties of RLSA(TM) Microwave Surface Wave Plasma and Its Applications to finFET Fabrication

被引：3

作者：

Chen, Lee ^{[1
]}

Yang, Qingyun ^{[1
]}

机构：

[1] Tokyo Electron Amer, Austin, TX 78741 USA

来源：

ADVANCED ETCH TECHNOLOGY FOR NANOPATTERNING II | 2013年 / 8685卷

关键词：

POWER DEPOSITION;

D O I：

10.1117/12.2014367

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A new type of plasma source (RLSA (TM)) is described to generate low temperature plasma in the wafer region. The low T-e characteristic arises from decoupling of wafer region palsma from the power deposition region. This new plasma source has been demonstrated to show improved performance in etching high aspect ratio structures with reduced micro-loading and ARDE and can help mitigate challenges in advanced finFET FEOL etch applications.

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页数：6

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