Design and Investigation of Charge-Plasma-Based Work Function Engineered Dual-Metal-Heterogeneous Gate Si-Si0.55Ge0.45 GAA-Cylindrical NWTFET for Ambipolar Analysis

In this paper, we have proposed dopingless gate all around (GAA) nanowire tunnel field-effect transistor (NWTFET) made up of dual-material channel (DMaC). Charge-plasma (CP) technique is used to induce the doping concentration of charge carriers in the intrinsic semiconductor. GAA structure uses zirconium silicate (IV) (ZrSiO4)/silicon dioxide (SiO2) for heterogeneous gate (HG) structure metalized with two different gate metals. Auxiliary gate (GM1) and tunneling gate (GM2) have different work functions, i.e., phi(1) and phi(2). The device physics is analyzed using electric field, charge carrier concentration, energy-band diagram, and tunneling rate across the structure. The effect of variation in phi(1) and phi(2) helps in the analysis of the ambipolar and analog behavior of the proposed device CP-dual metal-HG-DMaC-NWTFET. The reported ON-state current is 5.54 mu A/mu m, and the OFF-state current is approximately 0.1 aA/mu m. The proposed device showed negligible ambipolar current (10(-19) A/mu m) as negative bias increases to V-GS = -0.8 V making the device compatible for low-voltage applications.