Single intermediate-band solar cells of InGaN/InN quantum dot supracrystals

被引：16
|
作者：
Zhang, Qiubo [1 ]
Wei, Wensheng [1 ]
机构：
[1] Wenzhou Univ, Coll Phys & Elect Informat Engn, Wenzhou 325035, Peoples R China
来源：
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 2013年 / 113卷 / 01期
关键词：
EFFICIENCY;
D O I：
10.1007/s00339-013-7826-9
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
In this paper, an intermediate-band solar cell (IBSC) with only one IB was designed, where the three-dimensional In (x) Ga1-x N/InN quantum dot supracrystals were regularly arrayed in the i layer of the p-i-n type structural cell. IB characteristics such as position and width derived from discrete quantized energy levels in quantum dots were determined via solving the Schrodinger equation with the Kronig-Penny model. The principle of detailed balance was used to deal with the photoelectric conversion process in the IBSC. Characteristic parameters of the cell such as open circuit voltage, short circuit current density, and photoelectric conversion efficiency were numerically calculated. The influence of In content, average size of QDs, and interdot spacing on the cell performance was further analyzed.
引用
收藏
页码：75 / 82
页数：8
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