Photoluminescence study of InAsSb/InAsSbP heterostructures grown by low-pressure metalorganic chemical vapor deposition

被引：29

作者：

Kim, S

Erdtmann, M

Wu, D

Kass, E

Yi, H

Diaz, J

Razeghi, M

机构：

[1] Center for Quantum Devices, Northwestern University, Evanston

来源：

APPLIED PHYSICS LETTERS | 1996年 / 69卷 / 11期

关键词：

D O I：

10.1063/1.117048

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Photoluminescence has been measured for double- and separate-confinement InAsSb/InAsSbP heterostructures grown by low-pressure metalorganic vapor deposition. A measurement of the integrated luminescence intensity at the temperature range of 77-300 K shows that over a wide range of excitation level (1-5 x 10(2) W/cm(2)) the radiative transitions are the dominant mechanism below T similar to 170 K. Auger recombination coefficient C = C-0 exp(-E(a)/kT) with C-0 approximate to 5 x 10(-27) Cm-6/s and E(a) approximate to 40 meV has been estimated. (C) 1996 American Institute of Physics.

引用

页码：1614 / 1616

页数：3