Photoluminescence study of InAsSb/InAsSbP heterostructures grown by low-pressure metalorganic chemical vapor deposition

Photoluminescence has been measured for double- and separate-confinement InAsSb/InAsSbP heterostructures grown by low-pressure metalorganic vapor deposition. A measurement of the integrated luminescence intensity at the temperature range of 77-300 K shows that over a wide range of excitation level (1-5 x 10(2) W/cm(2)) the radiative transitions are the dominant mechanism below T similar to 170 K. Auger recombination coefficient C = C-0 exp(-E(a)/kT) with C-0 approximate to 5 x 10(-27) Cm-6/s and E(a) approximate to 40 meV has been estimated. (C) 1996 American Institute of Physics.