Strained-silicon MOSFETs for analog applications: Utilizing a supercritical-thickness strained layer for low leakage current and high breakdown voltage

被引：17

作者：

Kondo, M ^{[1
]}

Sugii, N

Miyamoto, M

Hoshino, Y

Hatori, M

Hirasawa, W

Kimura, Y

Kimura, S

Kondo, Y

Yoshida, I

机构：

[1] Renesas Technol Corp, Gunma, Japan

[2] Hitachi Ltd, Cent Res Lab, Tokyo 1858601, Japan

[3] Hitachi Ltd, Micro Device Div, Tokyo, Japan

[4] Renesas Eastern Japan Semicond Inc, Yamanashi, Japan

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2006年 / 53卷 / 05期

关键词：

breakdown voltage; critical thickness; SiGe; strained silicon;

D O I：

10.1109/TED.2006.872892

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Strained-silicon MOSFETs with both high breakdown voltage and low leakage current needed for RF/analog applications were investigated. Proper control of junction-depth profile and strained-silicon-layer thickness significantly improved transconductance, ON resistance, and leakage current. Breakdown voltage of strained-silicon MOSFETs was the same as silicon MOSFETs even at elevated temperatures. RF/analog performances, such as cutoff frequency and 1/f noise, were improved by this technology while keeping high-driving-voltage capability.

引用

页码：1226 / 1234

页数：9

共 25 条

[1] [Anonymous], 2003, IEEE INT ELECT DEVIC
[2] FORMATION OF CYLINDRICAL N-P JUNCTION DIODES BY ARSENIC ENHANCED DIFFUSION ALONG INTERFACIAL MISFIT DISLOCATIONS IN P-TYPE EPITAXIAL SI/SI(GE)
BRAGA, N
BUCZKOWSKI, A
KIRK, HR
ROZGONYI, GA
[J]. APPLIED PHYSICS LETTERS, 1994, 64 (11) : 1410 - 1412
[3] Film thickness constraints for manufacturable strained silicon CMOS
Fiorenza, JG
Braithwaite, G
Leitz, CW
Currie, MT
Yap, J
Singaporewala, F
Yang, VK
Langdo, TA
Carlin, J
Somerville, M
Lochtefeld, A
Badawi, H
Bulsara, MT
[J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2004, 19 (01) : L4 - L8
[4] FIORENZA JG, 2004, P ISTDM, P137
[5] HWANG JR, 2003, VLSI S, P103
[6] IRISAWA T, 2005, P ICSI 4 MAY, P102
[7] Measurement of the effect of self-heating in strained-silicon MOSFETs
Jenkins, KA
Rim, K
[J]. IEEE ELECTRON DEVICE LETTERS, 2002, 23 (06) : 360 - 362
[8] Generation of misfit dislocations and stacking faults in supercritical thickness strained-Si/SiGe heterostructures
Kimura, Y
Sugii, N
Kimura, S
Inui, K
Hirasawa, W
[J]. APPLIED PHYSICS LETTERS, 2006, 88 (03) : 1 - 3
[9] Kondo M, 2005, INT EL DEVICES MEET, P377
[10] Lee MH, 2003, 2003 IEEE INTERNATIONAL ELECTRON DEVICES MEETING, TECHNICAL DIGEST, P69

← 1 2 3 →