Ferroelectric thin film on a silicon-based pn junction: Coupling photovoltaic properties

被引：9

作者：

Li, Xuedong ^{[1
,2
]}

Wang, Xuemin ^{[1
]}

Peng, Liping ^{[1
]}

Zhang, Kuibao ^{[1
,3
]}

Wu, Weidong ^{[1
]}

Tang, Yongjian ^{[1
]}

机构：

[1] CAEP, Res Ctr Laser Fus, Mianyang, Peoples R China

[2] Mianyang Normal Univ, Coll Phys & Elect Engn, Mianyang, Peoples R China

[3] Southwest Univ Sci & Technol, State Key Lab Cultivat Base Nonmetal Composites &, Mianyang, Peoples R China

来源：

FERROELECTRICS | 2016年 / 500卷 / 01期

关键词：

Ferroelectrics; pn junction; photovoltaic properties; coupling; SOLAR-CELLS; EFFICIENCY; POLARIZATION; DISSOCIATION; MECHANISM; LAYER;

D O I：

10.1080/00150193.2016.1229532

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

PbTiO3 (PTO) thin film was deposited on a Si-based pn-junction to form a ferroelectric-pn junction structure (PTO/pn cell). It exhibits a coupling photovoltaic property. V-oc of the PTO/pn cell is approximately equal to V-oc summation of single pn-junction structure (pn cell) and single PTO films (PTO cell). I-sc and internal quantum efficiency of the PTO/pn cell are much higher than that of the PTO cell. Photovoltaic properties of the PTO/pn cell can be tuned by controlling the direction of the polarization voltage applied on the cell. Reasons for the tuning and enhanced photovoltaic properties are analyzed.

引用

页码：250 / 258

页数：9

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