The speed of solid-state electronic devices, determined by the temporal dynamics of charge carriers, could potentially reach unprecedented petahertz frequencies through direct manipulation by optical fields, consisting in a million-fold increase from state-of-the-art technology. In graphene, charge carrier manipulation is facilitated by exceptionally strong coupling to optical fields, from which stems an important back-action of photoexcited carriers. Here we investigate the instantaneous response of graphene to ultrafast optical fields, elucidating the role of hot carriers on sub-100 fs timescales. The measured nonlinear response and its dependence on interaction time and field polarization reveal the back-action of hot carriers over timescales commensurate with the optical field. An intuitive picture is given for the carrier trajectories in response to the optical-field polarization state. We note that the peculiar interplay between optical fields and charge carriers in graphene may also apply to surface states in topological insulators with similar Dirac cone dispersion relations.
机构:
Chinese Acad Sci, State Key Lab High Field Laser Phys, Shanghai Inst Opt & Fine Mech SIOM, Shanghai 201800, Peoples R China
Chinese Acad Sci, CAS Ctr Excellence Ultraintense Laser Sci, Shanghai 201800, Peoples R China
Univ Chinese Acad Sci, Ctr Mat Sci & Optoelect Engn, Beijing 100049, Peoples R ChinaChinese Acad Sci, State Key Lab High Field Laser Phys, Shanghai Inst Opt & Fine Mech SIOM, Shanghai 201800, Peoples R China
Bai, Ya
Li, Na
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Chinese Acad Sci, State Key Lab High Field Laser Phys, Shanghai Inst Opt & Fine Mech SIOM, Shanghai 201800, Peoples R China
Chinese Acad Sci, CAS Ctr Excellence Ultraintense Laser Sci, Shanghai 201800, Peoples R China
Xinxiang Univ, Phys & Elect Engn Dept, Xinxiang, Henan, Peoples R ChinaChinese Acad Sci, State Key Lab High Field Laser Phys, Shanghai Inst Opt & Fine Mech SIOM, Shanghai 201800, Peoples R China
Li, Na
Li, Ruxin
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Chinese Acad Sci, State Key Lab High Field Laser Phys, Shanghai Inst Opt & Fine Mech SIOM, Shanghai 201800, Peoples R China
Chinese Acad Sci, CAS Ctr Excellence Ultraintense Laser Sci, Shanghai 201800, Peoples R China
ShanghaiTech Univ, Sch Phys Sci & Technol, Shanghai, Peoples R ChinaChinese Acad Sci, State Key Lab High Field Laser Phys, Shanghai Inst Opt & Fine Mech SIOM, Shanghai 201800, Peoples R China
Li, Ruxin
Liu, Peng
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Chinese Acad Sci, State Key Lab High Field Laser Phys, Shanghai Inst Opt & Fine Mech SIOM, Shanghai 201800, Peoples R China
Chinese Acad Sci, CAS Ctr Excellence Ultraintense Laser Sci, Shanghai 201800, Peoples R China
Univ Chinese Acad Sci, Ctr Mat Sci & Optoelect Engn, Beijing 100049, Peoples R ChinaChinese Acad Sci, State Key Lab High Field Laser Phys, Shanghai Inst Opt & Fine Mech SIOM, Shanghai 201800, Peoples R China
机构:
Harvard Univ, Sch Engn & Appl Sci, Cambridge, MA 02138 USAImperial Coll London, Dept Mat, London SW7 2AZ, England
Pizzochero, Michele
Tepliakov, Nikita, V
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Imperial Coll London, Dept Mat, London SW7 2AZ, England
Imperial Coll London, Thomas Young Ctr Theory & Simulat Mat, London SW7 2AZ, England
ITMO Univ, Ctr Informat Opt Technol, St Petersburg 197101, RussiaImperial Coll London, Dept Mat, London SW7 2AZ, England
Tepliakov, Nikita, V
Mostofi, Arash A.
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Imperial Coll London, Dept Mat, London SW7 2AZ, England
Imperial Coll London, Thomas Young Ctr Theory & Simulat Mat, London SW7 2AZ, EnglandImperial Coll London, Dept Mat, London SW7 2AZ, England
Mostofi, Arash A.
Kaxiras, Efthimios
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Harvard Univ, Sch Engn & Appl Sci, Cambridge, MA 02138 USA
Harvard Univ, Dept Phys, Cambridge, MA 02138 USAImperial Coll London, Dept Mat, London SW7 2AZ, England