Early stage of diamond growth at low temperature

被引：42

作者：

Kromka, A. ^{[1
]}

Potocky, S. ^{[1
]}

Cermak, J. ^{[1
]}

Rezek, B. ^{[1
]}

Potmesil, J. ^{[1
]}

Zemek, J. ^{[1
]}

Vanecek, M. ^{[1
]}

机构：

[1] Acad Sci Czech Republic, Inst Phys, Vvi, Prague 16253 6, Czech Republic

来源：

关键词：

nanocrystalline diamond film; AFM; XPS; low temperature CVD;

D O I：

10.1016/j.diamond.2008.03.035

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We investigate the first stages of nanocrystalline diamond (NCD) thin film growth at low substrate temperature. NCD films were grown on silicon substrates by microwave plasma enhanced chemical vapor deposition (CVD) for 0-300 min at a temperature of 410 degrees C. Si substrates were ultrasonically seeded in suspension of detonation nanocrystalline diamond powder. The seeding density approached values up to 1 * 10(12) cm(-2), which allows growth of ultra-thin fully closed layers. Stagnation of the AFM roughness indicates that the low temperature NCD growth is a) delayed due to the surface contamination of the used nanodiamond powder and b) possibly dominated by the growth in the lateral direction. XPS measurements showed that the measured surface exhibits changes from a multi-phase composite (seeding layer) to single-phase one (NCD layer). Crown Copyright (C) 2008 Published by Elsevier B.V. All rights reserved.

引用

页码：1252 / 1255

页数：4

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